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3 edition of Development of a radiation-hard CMOS process found in the catalog.

Development of a radiation-hard CMOS process

Development of a radiation-hard CMOS process

final technical report

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  • 25 Currently reading

Published by George C. Marshall Space Flight Center, National Aeronautics and Space Administration, National Technical Information Service, distributor in Huntsville, Ala, [Springfield, Va .
Written in English


Edition Notes

Other titlesDevelopment of a radiation hard CMOS process
Statementby W.L. Power
SeriesNASA contractor report -- NASA CR-170925
ContributionsGeorge C. Marshall Space Flight Center
The Physical Object
FormatMicroform
Pagination1 v
ID Numbers
Open LibraryOL14982754M

Measurements of Matching and Noise Performance of a Prototype Readout Chip in 40nm CMOS Process for Hybrid Pixel Detectors , , iel, , k, , wski, h (11May) 3D IC for future HEP detectors. III-V Barrier Diode Radiation-Hard Infrared Detectors for Space Applications 2-Colour T2SL Detector Technology – deep-dive investigation InGaAs and InSb as well as other III-V compound semiconductor configurations as CMOS/ROIC designs and Type 2 Super Lattice (T2SL) has gained a lot of interest for IR detection applications.

Book Chapters. P. Kinget, M. Steyaert, and J. Van der Spiegel, "Full analog CMOS integration of very large time constants for synaptic transfer in neural networks," chapter in "Analog VLSI Neural Networks", Y. Takefuji (Ed.), Kluwer Academic Publishers, ISBN , pp. , November Proc. of the 7 th International Conference on Scanning Probe Spectroscopy and Related Methods (SPS'15), book of abstr. 28 () (Ge Nanoheteroepitaxy) (14) 12 GHz CMOS MEMS Lab-on-Chip System for Detection of Concentration of Suspended Particles in Bio-Suspensions S. Guha, A. Wolf, Ch. Meliani, Ch. Wenger.

  KEYWORDS: Oxides, CMOS sensors, Sensors, Ultraviolet radiation, Silicon, Quantum efficiency, Doping, Semiconducting wafers, Antimony, CMOS devices Read Abstract + We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. For example, many sensor applications are unique to government requirements and hence are funded solely by the government. Similarly, there are additional technologies that are essential for government missions but which may have or develop commercial application as well; however, the cost of their development is usually so high that industry cannot make a business case for maturing them.


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Development of a radiation-hard CMOS process Download PDF EPUB FB2

Get this from a library. Development of a radiation-hard CMOS process: final technical report. [W L Power; George C. Marshall Space Flight Center.]. CMOS sensors provide the possibility of designing detectors for a large variety of applications with all the benefits and flexibility of the widely used CMOS process.

This book is the first unified treatment of the analysis and design methods for protection of principally electronic systems from the deleterious effects of nuclear and electro-magnetic radiation. WESLEY H. MORRIS is President of Silicon-X (Technology focus), hardening CMOS devices to radiation and extreme temperatures.

His career experience includes development of RH CMOS devices with SOS (RCA) and SOI (Harris), the first to prove bulk CMOS devices can be made latchup immune to extreme SEE radiation and operate reliably at high.

His career experience includes development of RH CMOS devices with SOS (RCA) and SOI (Harris), the first to prove bulk CMOS devices can be made latchup immune to extreme SEE radiation and operate reliably at high temperatures (C).

Morris is an author/inventor with multiple papers and patents related to RH and HT topics. Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), especially for environments in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

This work presents the development of radiation-hard CMOS monolithic pixel sensors as direct electron detectors for high resolution, fast dynamic imaging in Transmission Electron Microscopy.

The R&D path from small scale prototypes to megapixel, reticle size sensors manufactured in and µm commercial CMOS processes is briefly reviewed. A number of advances, such as putting more processing into a pixel or making a smaller pixel, depend on continued improvements in silicon complementary metal oxide semiconductor (CMOS) process technology, driven by the semiconductor industry’s push to stay on the Moore’s law scaling curve.

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation.

To achieve such performances, the voltage reference is designed in a suitable nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. Radiation testing of semiconductors is time-consuming and expensive.

There are limited test facilities available and often a long waiting list to get "beam time." It is, however, an important part of product testing that is required for devices that will be used in high-radiation environments, such as space. Conference papers s “GHz CMOS Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric AlN Contour-Mode MEMS Resonators,” Changjie Zuo, Jan Van der Spiegel and Gianluca Piazza, IEEE Custom Integrated Circuits Conference.

A short review of this development effort is presented. Particular attention is given to the circuit redesign which was made necessary by the decision to implement FPIX2 using a standard deep-submicron CMOS process rather than an explicitly radiation-hard CMOS technology, as originally planned.

radiation-hard electronics. On the accelerator side, higher beam currents and the increased sophistication of monitoring and diagnostic systems are bringing the need for radiation-resistant electronics to the forefront of designers’ concerns.

Although one can argue. Scientific Data Collection/Analysis: This custom bibliography from the NASA Scientific and Technical Information Program lists a sampling of records found in the NASA Aeronautics and Space Database. The scope of this topic includes technologies for.

Radiation-Hard Intertial Sensors Sandia focuses on inertial sensors, such as accelerometers and gyroscopes, that perform in radiation environments. Because the signals are small, a MEMS sensor must be close to its supporting electronics.

However, developments by CMOS foundries have enabled the processing of charge transfer CMOS imagers that effectively have a CCD image area with a CTE of > % and CMOS readout circuits (Korthout et al., ).

These offer significant advantages to the existing CCD technology in terms of the minimum pixel size and line speed achievable.

Radiation-hardened circuits are modified versions of non-hardened equivalents, incorporating revised designs for fault-tolerance and software approaches to deal with disturbances, along with suitable manufacturing process amendments.

Bipolar ICs are more radiation-hard than CMOS circuits. We demonstrate trapping in a surface-electrode ion trap fabricated in a nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes.

The process includes doped active regions and metal interconnect layers, allowing for co. Radiation Effects (REC) The purposes of the Radiation Effects Committee of the IEEE Nuclear and Plasma Sciences Society are to advance the theory and application of radiation effects and its allied sciences, to disseminate information pertaining to those fields, and to maintain high scientific and technical standards among its members.

The major breakthrough in the level of integration came in with the invention of CMOS (Wanlass and Sah ) in which both n- and p-channel MOSFETs are constructed simultaneously on the same substrate. The most basic building block of digital CMOS circuits is a CMOS inverter.

A CMOS inverter consists of an n-MOSFET and a p-MOSFET. As a part of this work, Dr. Smith was involved in a wide range of activities including the design and development of nanometer scale radiation hard mixed signal ASICs, FPGA based data acquisition systems, medical imaging electronics, chemical vapor deposition diamond detectors, and high voltage power supply systems.Complete demonstration of a prototype radiation-hard mixed-signal micron deep submicron technology.

Demonstrate analog and mixed-signal electronic design automation. Continue initial development of a micron radiation-hard, CMOS fabrication process for .Shop all products from Cypress Semiconductor. Fast, free and DDP shipping options available.

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